RELATIONSHIP BETWEEN HOT-ELECTRONS HOLES AND DEGRADATION OF P-CHANNEL AND N-CHANNEL MOSFETS

被引：61
作者：
TSUCHIYA, T
FREY, J
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 01期
关键词：
D O I：
10.1109/EDL.1985.26024
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：8 / 11
页数：4
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