COBALT DISILICIDE EPITAXIAL-GROWTH ON THE SILICON (111) SURFACE

被引：117

作者：

PIRRI, C ^{[1
]}

PERUCHETTI, JC ^{[1
]}

GEWINNER, G ^{[1
]}

DERRIEN, J ^{[1
]}

机构：

[1] CNRS,ETUD PROPRIETES ELECTR SOLIDES LAB,F-38042 GRENOBLE,FRANCE

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.29.3391

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3391 / 3397

页数：7

共 38 条

[31] BONDING AND STRUCTURE OF COSI2 AND NISI2 [J].

TERSOFF, J ;

HAMANN, DR .

PHYSICAL REVIEW B, 1983, 28 (02) :1168-1170

[32] THERMAL-STABILITY AND GROWTH-KINETICS OF CO2SI AND COSI IN THIN-FILM REACTIONS [J].

TU, KN ;

OTTAVIANI, G ;

THOMPSON, RD ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4406-4410

[33] FORMATION OF ULTRATHIN SINGLE-CRYSTAL SILICIDE FILMS ON SI - SURFACE AND INTERFACIAL STABILIZATION OF SI-NISI2 EPITAXIAL STRUCTURES [J].

TUNG, RT ;

GIBSON, JM ;

POATE, JM .

PHYSICAL REVIEW LETTERS, 1983, 50 (06) :429-432

[34] GROWTH OF SINGLE-CRYSTAL COSI2 ON SI (111) [J].

TUNG, RT ;

BEAN, JC ;

GIBSON, JM ;

POATE, JM ;

JACOBSON, DC .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :684-686

[35] COBALT SILICIDE LAYERS ON SI .1. STRUCTURE AND GROWTH [J].

VANGURP, GJ ;

LANGEREIS, C .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (10) :4301-4307

[36] DIRECT OBSERVATION OF THE NUCLEATION AND GROWTH MODES OF AG-SI(111) [J].

VENABLES, JA ;

DERRIEN, J ;

JANSSEN, AP .

SURFACE SCIENCE, 1980, 95 (2-3) :411-430

[37] EXPERIMENTAL AND THEORETICAL BAND-STRUCTURE STUDIES OF REFRACTORY-METAL SILICIDES [J].

WEAVER, JH ;

MORUZZI, VL ;

SCHMIDT, FA .

PHYSICAL REVIEW B, 1981, 23 (06) :2916-2922

[38] ANGLE-RESOLVED ULTRAVIOLET PHOTOEMISSION-STUDY OF SI(111) 7 X 7 AND 1 X 1 SURFACES [J].

YOKOTSUKA, T ;

KONO, S ;

SUZUKI, S ;

SAGAWA, T .

SOLID STATE COMMUNICATIONS, 1981, 39 (09) :1001-1004

← 1 2 3 4 →