COBALT DISILICIDE EPITAXIAL-GROWTH ON THE SILICON (111) SURFACE

被引：117
|
作者：
PIRRI, C [1 ]
PERUCHETTI, JC [1 ]
GEWINNER, G [1 ]
DERRIEN, J [1 ]
机构：
[1] CNRS,ETUD PROPRIETES ELECTR SOLIDES LAB,F-38042 GRENOBLE,FRANCE
来源：
PHYSICAL REVIEW B | 1984年 / 29卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.29.3391
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：3391 / 3397
页数：7
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