Large-signal modeling method for power FETs and diodes

被引：0

作者：

Sun Lu ^{[1
]}

Wang Jiali ^{[1
]}

Wang Shan ^{[1
]}

Li Xuezheng ^{[1
]}

Shi Hui ^{[1
]}

Wang Na ^{[1
]}

Guo Shengping ^{[1
]}

机构：

[1] Xidian Univ, Sch Electromech Engn, Xian 710071, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2009年 / 30卷 / 06期

关键词：

large signal model; extraction method; nonlinear scattering function; semiconductor devices;

D O I：

10.1088/1674-4926/30/6/064003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Under a large signal drive level, a frequency domain black box model of the nonlinear scattering function is introduced into power FETs and diodes. A time domain measurement system and a calibration method based on a digital oscilloscope are designed to extract the nonlinear scattering function of semiconductor devices. The extracted models can reflect the real electrical performance of semiconductor devices and propose a new large-signal model to the design of microwave semiconductor circuits.

引用

页数：4

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