PHOTOACOUSTIC CHARACTERIZATION OF SEMICONDUCTORS - TRANSPORT-PROPERTIES AND THERMAL-DIFFUSIVITY IN GAAS AND SI

被引:89
作者
NETO, AP [1 ]
VARGAS, H [1 ]
LEITE, NF [1 ]
MIRANDA, LCM [1 ]
机构
[1] INST PESQUISAS ESPACIAIS, ASSOCIADO SENSORES & MAT LAB, BR-12201 Sao Jose Dos Campos, SP, BRAZIL
关键词
D O I
10.1103/PhysRevB.41.9971
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The photoacoustic signal of two semiconductor samples is investigated as a function of the modulation frequency in a heat-transmission configuration. It is shown that, in the frequency range where the sample is thermally thick, the signal amplitude and phase can single out the different fast and slow nonradiative recombination heat sources responsible for the photoacoustic signal. The characterization of the thermal and the carrier transport properties is discussed and some practical procedures for this purpose are also outlined. © 1990 The American Physical Society.
引用
收藏
页码:9971 / 9979
页数:9
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