AN IMPROVED MODEL FOR NOISE CHARACTERIZATION OF MICROWAVE GAAS-FETS

被引：10
作者：
FROELICH, RK
机构：
[1] Watkins-Johnson Co, Palo Alto, CA,
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1990年 / 38卷 / 06期
关键词：
D O I：
10.1109/22.130963
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A broadband noise model for microwave FETs has been described. The model consists of small-signal lumped elements together with two noise sources. A measurement of broadband S parameters plus a single-frequency measurement of optimum source susceptance can yield enough information to determine the model, although greater accuracy is obtained using additional noise data to determine the precise value of the gate resistance. The model's predictions match well with measured noise parameter data for a high-performance GaAs FET over a wide frequency range.
引用
收藏
页码：703 / 706
页数：4
相关论文
共 12 条
[1]   NOISE MODELING AND MEASUREMENT TECHNIQUES [J].
CAPPY, A .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (01) :1-10
[2]   DESIGN OF MICROWAVE GAAS-MESFETS FOR BROAD-BAND LOW-NOISE AMPLIFIERS [J].
FUKUI, H .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (07) :643-650
[3]   MICROWAVE NOISE CHARACTERIZATION OF GAAS-MESFETS - EVALUATION BY ON-WAFER LOW-FREQUENCY OUTPUT NOISE CURRENT MEASUREMENT [J].
GUPTA, MS ;
PITZALIS, O ;
ROSENBAUM, SE ;
GREILING, PT .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1987, 35 (12) :1208-1218
[4]   MICROWAVE NOISE CHARACTERIZATION OF GAAS-MESFETS - DETERMINATION OF EXTRINSIC NOISE PARAMETERS [J].
GUPTA, MS ;
GREILING, PT .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (04) :745-751
[5]  
Haus H.A., 1960, P IRE, V48, P69, DOI [10.1109/jrproc.1960.287381, DOI 10.1109/JRPROC.1960.287381]
[6]   DETERMINATION OF DEVICE NOISE PARAMETERS [J].
LANE, RQ .
PROCEEDINGS OF THE IEEE, 1969, 57 (08) :1461-&
[7]  
PECK DE, 1984, THESIS U MICHIGAN AN
[8]   A FUNCTIONAL GAAS-FET NOISE MODEL [J].
PODELL, AF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (05) :511-517
[9]   MODELING OF NOISE PARAMETERS OF MESFET AND MODFET AND THEIR FREQUENCY AND TEMPERATURE-DEPENDENCE [J].
POSPIESZALSKI, MW .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1989, 37 (09) :1340-1350
[10]  
PUCEL RA, 1976, IEEE J SOLID-ST CIRC, V11, P243, DOI 10.1109/JSSC.1976.1050711
12