THEORETICAL-STUDY OF THE ATOMIC-STRUCTURE OF SILICON (211), (311), AND (331) SURFACES

被引：303
作者：
CHADI, DJ
机构：
来源：
PHYSICAL REVIEW B | 1984年 / 29卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.29.785
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：785 / 792
页数：8
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