BARRIER HEIGHT ENHANCEMENT OF INP SCHOTTKY JUNCTIONS BY TREATMENT WITH PHOTODECOMPOSED PH3

被引：18

作者：

SUGINO, T

ITO, H

SHIRAFUJI, J

机构：

[1] Department of Electrical Engineering, Faculty of Engineering, Osaka University, Osaka, 2-1 Yamadaoka, Suita

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 21期

关键词：

Schottky barrier devices; Semiconductor devices and materials;

D O I：

10.1049/el:19901124

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Au-InP Schottky junctions are formed on a surface treated by ArF excimer laser photolytic process of phosphine (PH3) gas. The Schottky junction has a metal-insulator-semiconductor (MIS) structure because of the existence of a thin P layer deposited on the InP surface. The barrier height increases to 0·65 eV and the reverse current is reduced by more than two orders of magnitude compared with the case of Schottky junctions without photolytic treatment. The Richardson constant of the novel Schottky junction is evaluated as 0·126 A cm-2 K-2 from the temperature dependence of the saturation current. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1750 / 1751

页数：2

共 9 条

[1] EFFECT OF PHOTOCHEMICAL ETCHING ON INTERFACE STATE DENSITY OF GA0.47IN0.53AS METAL-INSULATOR SEMICONDUCTOR DIODES [J].