INFLUENCE OF GEOMETRY ON INTERPRETATION OF CURRENT IN EPITAXIAL DIODES

被引：45
作者：
GRIMBERGEN, CA [1 ]
机构：
[1] GRONINGEN STATE UNIV,TECH PHYS LAB,GRONINGEN,NETHERLANDS
来源：
SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 12期
关键词：
D O I：
10.1016/0038-1101(76)90185-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1033 / 1037
页数：5
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