THE ENHANCEMENT OF GATE-INDUCED-DRAIN-LEAKAGE (GIDL) CURRENT IN SHORT-CHANNEL SOI MOSFET AND ITS APPLICATION IN MEASURING LATERAL BIPOLAR CURRENT GAIN-BETA

被引:67
作者
CHEN, J
ASSADERAGHI, F
KO, PK
HU, CM
机构
[1] Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA
关键词
D O I
10.1109/55.192844
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new off-state leakage current unique for short-channel SOI MOSFET's is reported. This off-state leakage is the amplification of gate-induced-drain-leakage (GIDL) current by the lateral bipolar transistor in a SOI device due to the floating body. The leakage current can be enhanced by as much as 100 times for 1 / 4-mum SOI devices. This can pose severe constraints in future 0.1-mum SOI device design. A novel technique was developed based on this mechanism to measure the lateral bipolar transistor current gain beta of SOI devices without using a body contact.
引用
收藏
页码:572 / 574
页数:3
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