QUALIFICATION OF IGBTS AND SIRET FOR HIGH-FREQUENCY INVERTER APPLICATION

被引：3

作者：

BOBER, G ^{[1
]}

HEUMANN, K ^{[1
]}

PAPP, G ^{[1
]}

机构：

[1] SIEMENS AG,W-8520 ERLANGEN,GERMANY

来源：

ARCHIV FUR ELEKTROTECHNIK | 1990年 / 74卷 / 01期

关键词：

D O I：

10.1007/BF01573226

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

New power devices - IGBT's and a bipolar transistor with cellular structure are investigated for applications in fast switching PWM inverters. Device ratings are in the 1000 V/100 A range, inverter power reaches up to some ten kilovoltamperes, respectively. Subjects of the comparison are the gate drive requirements, conduction and switching losses, switching speed and overload capability. An automated test equipment for the integral measurement of power losses in function of the switching frequency is described. As a result IGBT's need simple gate drive circuits, but operating frequency at rated current is lower, than that of a bipolar junction transistor with cellular structure. However the base drive circuit of a cellular transistor is more complex. © 1990 Springer-Verlag.

引用

页码：3 / 14

页数：12

共 13 条

[1]

BAYERER R, 1987, P POWER CONVERSION I, P254

[2]

BEHR E, 1987, EUROPEAN C POWER ELE, P99

[3]

Heumann K., 1989, EPE '89. 3rd European Conference on Power Electronics and Applications, P99

[4]

Heumann K., 1989, ETZ, V110, P458

[5]

HEUMANN K, 1988, IEEE POWER ELECTRONI, P271

[6]

HEUMANN K, 1990, INT POWER ELECTRONIC, P161

[7]

JAVANOVIC MM, 1986, IEEE IAS ANN M, P413

[8]

Lorenz L., 1986, 3rd International MACROELECTRONICS Conference, P56

[9]

MARQUARDT R, 1982, THESIS U HANNOVER

[10] SAFE OPERATING AREA FOR 1200-V NONLATCHUP BIPOLAR-MODE MOSFETS [J].

NAKAGAWA, A ;

YAMAGUCHI, Y ;

WATANABE, K ;

OHASHI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) :351-355

← 1 2 →