EVIDENCE FOR LARGE LATTICE-RELAXATION AT THE DX CENTER IN SI-DOPED ALXGA1-XAS

被引:89
作者
MOONEY, PM
NORTHROP, GA
MORGAN, TN
GRIMMEISS, HG
机构
来源
PHYSICAL REVIEW B | 1988年 / 37卷 / 14期
关键词
D O I
10.1103/PhysRevB.37.8298
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:8298 / 8307
页数:10
相关论文
共 31 条
[1]   COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].
CHAND, N ;
HENDERSON, T ;
KLEM, J ;
MASSELINK, WT ;
FISCHER, R ;
CHANG, YC ;
MORKOC, H .
PHYSICAL REVIEW B, 1984, 30 (08) :4481-4492
[2]   DEEP LEVEL IMPURITIES IN SEMICONDUCTORS [J].
GRIMMEISS, HG .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :341-376
[3]   SPECTRAL DISTRIBUTION OF PHOTOIONIZATION CROSS-SECTIONS BY PHOTOCONDUCTIVITY MEASUREMENTS [J].
GRIMMEISS, HG ;
LEDEBO, LA .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2155-2162
[4]   NEW MODEL OF DEEP DONOR CENTRES IN AlxGa1 - xAs. [J].
Henning, J.C.M. ;
Ansems, J.P.M. .
Semiconductor Science and Technology, 1987, 2 (01) :1-13
[5]  
HENNING JC, 1987, B AM PHYS SOC, V32, P504
[6]   DETERMINATION OF THE PHOTOIONIZATION THRESHOLD OF THE DEEP DONOR IN AL0.33GA0.67AS-SI - EVIDENCE FOR SMALL LATTICE-RELAXATION [J].
HENNING, JCM ;
ANSEMS, JPM .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 44 (03) :245-247
[7]   DEEP DONOR MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY EFFECT [J].
HJALMARSON, HP ;
DRUMMOND, TJ .
APPLIED PHYSICS LETTERS, 1986, 48 (10) :656-658
[8]   THEORY OF LIGHT ABSORPTION AND NON-RADIATIVE TRANSITIONS IN F-CENTRES [J].
HUANG, K ;
RHYS, A .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1950, 204 (1078) :406-423
[9]   A MODEL FOR DX CENTERS - BOND RECONSTRUCTION DUE TO LOCAL RANDOM DONOR-HOST ATOM CONFIGURATIONS IN MIXED SEMICONDUCTOR ALLOYS [J].
KOBAYASHI, KLI ;
UCHIDA, Y ;
NAKASHIMA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (12) :L928-L931
[10]   CHEMICAL TRENDS IN THE ACTIVATION-ENERGIES OF DX CENTERS [J].
KUMAGAI, O ;
KAWAI, H ;
MORI, Y ;
KANEKO, K .
APPLIED PHYSICS LETTERS, 1984, 45 (12) :1322-1323