GAAS HBT WIDE-BAND MATRIX DISTRIBUTED AND DARLINGTON FEEDBACK-AMPLIFIERS TO 24 GHZ

被引：31
作者：
KOBAYASHI, KW
ESFANDIARI, R
HAFIZI, ME
STREIT, DC
OKI, AK
TRAN, LT
UMEMOTO, DK
KIM, ME
机构：
[1] TRW Inc., Electronics and Technology Division, CA 90278, One Space Park, Redondo Beach
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1991年 / 39卷 / 12期
关键词：
D O I：
10.1109/22.106539
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports on the design and performance of a 2-24 GHz distributed matrix amplifier and a 1-20 GHz 2-stage Darlington coupled amplifier based on an advanced HBT MBE profile which increases the bandwidth response of the distributed and Darlington amplifiers by providing lower base-emitter and collector-base capacitances. The matrix amplifier has a 9.5 dB nominal gain and a 3-dB bandwidth to 24 GHz. This result benchmarks the highest bandwidth reported for an HBT distributed amplifier. The input and output VSWR's are less than 1.5:1 and 2.0:1, respectively. The total power consumed is less than 60 mW. The chip size measures 2.5 x 2.6 mm2. The 2-stage Darlington amplifier has 7 dB gain and 3-dB bandwidth beyond 20 GHz. The input and output VSWR's are less than 1.5:1 and 2.3:1, respectively. This amplifier consumes 380 mW of power and has a chip size of 1.66 x 1.05 mm2.
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页码：2001 / 2009
页数：9
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