THE DIFFRACTION OF LIGHT BY TRANSIENT GRATINGS IN CRYSTALLINE, ION-IMPLANTED, AND AMORPHOUS-SILICON

被引：37

作者：

VAITKUS, J ^{[1
]}

JARASIUNAS, K ^{[1
]}

GAUBAS, E ^{[1
]}

JONIKAS, L ^{[1
]}

PRANAITIS, R ^{[1
]}

SUBACIUS, L ^{[1
]}

机构：

[1] ACAD SCI LISSR,INST SEMICOND PHYS,VILNIUS 232600,LITHUANIA,USSR

来源：

关键词：

D O I：

10.1109/JQE.1986.1073129

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1298 / 1305

页数：8

共 28 条

[1] BAREIKIS V, 1981, HOT ELECTRON DIFFUSI
[2] PICOSECOND RECOMBINATION OF PHOTOEXCITED CARRIERS IN GLOW-DISCHARGE A-SI-H FILMS OF DIFFERENT DEPOSITION TEMPERATURE
BERGNER, H
BRUCKNER, V
DIETRICH, D
NOWICK, W
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 120 (02): : 655 - 658
[3] Butkus V., 1983, Soviet Physics - Collection, V23, P75
[4] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON
DZIEWIOR, J
SCHMID, W
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348
[5] DIFFRACTION EFFICIENCY AND DECAY TIMES OF FREE-CARRIER GRATINGS IN SILICON
EICHLER, HJ
MASSMANN, F
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3237 - 3242
[6] FERRY DK, 1980, PHYSICS NONLINEAR TR
[7] LIGHT-INDUCED TRANSIENT GRATING DECAY IN SI AND SOME AIIBVI COMPOUNDS
GAUBAS, E
JARASIUNAS, K
VAITKUS, J
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1982, 69 (01): : K87 - K90
[8] GODIK EE, 1978, IZV AN SSSR FIZ+, V42, P1206
[9] THE ROLE OF INTERCARRIER SCATTERING IN EXCITED SILICON
GRIVITSKAS, V
WILLANDER, M
VAITKUS, J
[J]. SOLID-STATE ELECTRONICS, 1984, 27 (06) : 565 - 572
[10] INVESTIGATION OF NONEQUILIBRIUM PROCESSES IN SEMICONDUCTORS BY METHOD OF TRANSIENT HOLOGRAMS
JARASIUNAS, K
VAITKUS, J
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 44 (02): : 793 - 800