DYNAMICS OF CAPTURE FROM FREE-CARRIER TAILS IN DEPLETION REGIONS AND ITS CONSEQUENCES IN JUNCTION EXPERIMENTS

被引：36

作者：

MEIJER, E

GRIMMEISS, HG

LEDEBO, LA

机构：

[1] UNIV LUND,DEPT SOLID STATE PHYS,S-22007 LUND 7,SWEDEN

[2] INNOVANCE AB,S-22350 LUND,SWEDEN

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 12期

关键词：

D O I：

10.1063/1.333029

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4266 / 4274

页数：9

共 22 条

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[2] SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS FOR DEEP LEVEL IMPURITY DETERMINATION
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[3] THERMAL AND OPTICAL GENERATION CURRENT IN REVERSE-BIASED GOLD-DOPED SILICON P+N JUNCTIONS WITHOUT DEPLETION APPROXIMATION
BRAUN, S
GRIMMEISS, HG
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) : 2789 - 2794
[4] FIELD-INDEPENDENCE OF THERMAL EMISSION RATE IN AU-DOPED SILICON
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GRIMMEISS, HG
[J]. SOLID STATE COMMUNICATIONS, 1972, 11 (10) : 1457 - +
[5] THERMAL ACTIVATION-ENERGY OF GOLD-ACCEPTOR LEVEL IN SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) : 831 - 837
[6] DETERMINATION OF DEEP-LEVEL ENERGY AND DENSITY PROFILES IN INHOMOGENEOUS SEMICONDUCTORS
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[J]. APPLIED PHYSICS LETTERS, 1973, 23 (03) : 150 - 151
[7] CHEMICAL-IDENTIFICATION OF DEEP ENERGY-LEVELS IN SI-SE
GRIMMEISS, HG
JANZEN, E
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LODDING, A
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6238 - 6242
[8] DEEP LEVEL IMPURITIES IN SEMICONDUCTORS
GRIMMEISS, HG
[J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 : 341 - 376
[9] CAPTURE FROM FREE-CARRIER TAILS IN THE DEPLETION REGION OF JUNCTION BARRIERS
GRIMMEISS, HG
LEDEBO, LA
MEIJER, E
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 307 - 308
[10] FUNDAMENTALS OF JUNCTION MEASUREMENTS IN THE STUDY OF DEEP ENERGY-LEVELS IN SEMICONDUCTORS
GRIMMEISS, HG
OVREN, C
[J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1981, 14 (09): : 1032 - 1042

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