AVALANCHE BREAKDOWN IN READ DIODES AND PIN DIODES

被引：25

作者：

GIBBONS, G

SZE, SM

机构：

来源：

SOLID-STATE ELECTRONICS | 1968年 / 11卷 / 02期

关键词：

D O I：

10.1016/0038-1101(68)90083-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：225 / +

页数：1

共 13 条

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[2]

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[3]

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[7]

MISAWA T, 1966, IEEE T ELECTRON DEV, VED13, P143, DOI 10.1109/T-ED.1966.15648

[8]

MOLL JL, 1964, PHYSICS SEMICONDUCTO

[9] A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE [J].

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BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (02) :401-446

[10] EFFECT OF JUNCTION CURVATURE ON BREAKDOWN VOLTAGE IN SEMICONDUCTORS [J].

SZE, SM ;

GIBBONS, G .

SOLID-STATE ELECTRONICS, 1966, 9 (09) :831-&

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