HIGH-THROUGHPUT, HIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY

被引：14

作者：

PFEIFFER, HC ^{[1
]}

GROVES, TR ^{[1
]}

NEWMAN, TH ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1988年 / 32卷 / 04期

关键词：

ELECTRON BEAMS - LITHOGRAPHY;

D O I：

10.1147/rd.324.0494

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The introduction of the shaped-beam imaging technique has greatly enhanced the exposure efficiency of electron-beam lithography systems. IBM's EL systems provide the throughput needed for lithography applications in semiconductor fabrication lines. The resolution of these systems has been steadily improved over the past 15 years in support of the semiconductor lithography trend toward submicron dimensions. This paper describes the latest version (EL-3 system) capable of fabricating 0. 25- mu m features. The technical challenges of submicron e-beam lithography are discussed, and practical solutions together with experimental results are presented.

引用

页码：494 / 501

页数：8

共 18 条

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