INSITU SPECTROSCOPIC ELLIPSOMETRY INVESTIGATION OF THE NUCLEATION OF MICROCRYSTALLINE SILICON

被引：23
作者：
DREVILLON, B
GODET, C
KUMAR, S
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 23期
关键词：
D O I：
10.1063/1.97757
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1651 / 1653
页数：3
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[1]   INSITU INVESTIGATION OF THE GROWTH OF RF GLOW-DISCHARGE DEPOSITED AMORPHOUS-GERMANIUM AND SILICON FILMS [J].
ANTOINE, AM ;
DREVILLON, B ;
CABARROCAS, PRI .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) :2501-2508
[2]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[3]   AN ELLIPSOMETRY STUDY OF A HYDROGENATED AMORPHOUS-SILICON BASED N-I STRUCTURE [J].
COLLINS, RW ;
CLARK, AH ;
GUHA, S ;
HUANG, CY .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) :4566-4571
[4]   INSITU INVESTIGATION OF THE NUCLEATION OF MICROCRYSTALLINE SI [J].
COLLINS, RW .
APPLIED PHYSICS LETTERS, 1986, 48 (13) :843-845
[5]   FAST POLARIZATION MODULATED ELLIPSOMETER USING A MICROPROCESSOR SYSTEM FOR DIGITAL FOURIER-ANALYSIS [J].
DREVILLON, B ;
PERRIN, J ;
MARBOT, R ;
VIOLET, A ;
DALBY, JL .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1982, 53 (07) :969-977
[6]   TRANSFORMATION OF MICROCRYSTALLINE STATE OF HYDROGENATED SILICON TO AMORPHOUS ONE DUE TO PRESENCE OF MORE ELECTRONEGATIVE IMPURITIES [J].
HIRAKI, A ;
FUKUSHIMA, Y ;
SATO, T ;
KIYONO, H ;
TERAUCHI, H ;
IMURA, T .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :791-794
[7]   INSITU OBSERVATION OF POLYSILICON NUCLEATION AND GROWTH [J].
HOTTIER, F ;
CADORET, R .
JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) :304-312
[8]   STRUCTURE CHANGE OF MICROCRYSTALLINE SILICON FILMS IN DEPOSITION PROCESS [J].
IMURA, T ;
KAYA, H ;
TERAUCHI, H ;
KIYONO, H ;
HIRAKI, A ;
ICHIHARA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (02) :179-183
[9]   INSITU SPECTROSCOPIC ELLIPSOMETRY STUDY OF THE GROWTH OF MICROCRYSTALLINE SILICON [J].
KUMAR, S ;
DREVILLON, B ;
GODET, C .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) :1542-1544
[10]   GROWTH OF PLASMA-TRANSPORT MICROCRYSTALLINE SILICON AS STUDIED BY INSITU RAMAN-SPECTROSCOPY [J].
RICHTER, H ;
LEY, L .
JOURNAL DE PHYSIQUE, 1982, 43 (NC1) :247-251
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