ORIGIN OF THE -4.4 EV BAND IN CDTE(100)

被引:17
作者
OLGUIN, D
BAQUERO, R
机构
[1] Departamento de Física, CINVESTAV-IPN, 07000 Mexico, Distrito Federal
关键词
D O I
10.1103/PhysRevB.50.1980
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We calculate the bulk (infinite system), (100)-bulk-projected and (100)-surface-projected Green's functions using the surface-Green's-function matching method and an empirical tight-binding Hamiltonian with tight-binding parameters that describe well the bulk band structure of CdTe. In particular, we analyze the band (B-4) arising at -4.4 eV from the top of the valence band at GAMMA according to the results of Niles and Hochst and at -4.6 eV according to Gawlik et al., both obtained by angle-resolved photoelectron spectroscopy. We give a theoretical description of this band.
引用
收藏
页码:1980 / 1983
页数:4
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