DIRECT-CURRENT BIAS EFFECT ON THE SYNTHESIS OF (001)-TEXTURED DIAMOND FILMS ON SILICON

被引：48

作者：

LEE, JS ^{[1
]}

LIU, KS ^{[1
]}

LIN, IN ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,CTR MAT SCI,HSINCHU 30043,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 11期

关键词：

D O I：

10.1063/1.114732

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A diamond film consisting of almost 100% [001] grains can be synthesized at a fast rate (similar to 3 mu m/h) by a two-step process. First, the nuclei are formed under -160 V dc bias with 3 mol % CH4/H-2 at 900 degrees C substrate temperature and then the films are grown under -100 V dc bias with around 5-6 mol % CH4/H-2 at the same temperature. The nucleation of the diamond is enhanced by using bias voltage. The a and b axis of [001] textured diamond films grown under large bias voltage are aligned with a and b axes of silicon, viz. (100)(diamond)\\(100)(Si) and [110](diamond)\\[110](Si). The effect of bias voltage on the growth behavior of the diamond films is accounted for by the suppression of the growth of the non-[001] grains due to the electron emission under bias. (C) 1995 American Institute of Physics.

引用

页码：1555 / 1557

页数：3

共 18 条

[1] TWINNING AND FACETING IN EARLY STAGES OF DIAMOND GROWTH BY CHEMICAL VAPOR-DEPOSITION [J].