2.51 EV DONOR-ACCEPTOR PAIR PHOTOLUMINESCENCE FROM ZN-DOPED CUALSE2 EPILAYER GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：7
作者：
CHICHIBU, S
SHIRAKATA, S
SUDO, R
UCHIDA, M
HARADA, Y
MATSUMOTO, S
HIGUCHI, H
ISOMURA, S
机构：
[1] EHIME UNIV,FAC ENGN,MATSUYAMA,EHIME 790,JAPAN
[2] BENTEC CORP,TOKYO 190,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷
关键词：
ZN-DOPING; CUALSE2; LP-MOCVD; D-A PAIR; PHOTOLUMINESCENCE; IONIZATION ENERGY;
D O I：
10.7567/JJAPS.32S3.531
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A donor to acceptor pair photoluminescence (PL) peak at 2.51 eV was observed in Zn-doped CuAlSe2 epilayers grown by low-pressure metalorganic chemical vapor deposition. The summation of ionization energies of the donor and the acceptor was obtained to be 330 meV from the excitation intensity dependence of the PL peak energy. The Zn impurity is shown to act as a defect-killer because of the apperance of exciton emission at 2.716 eV.
引用
收藏
页码：531 / 533
页数：3
相关论文
共 14 条
  • [1] VISIBLE PHOTOLUMINESCENCE OF ZN-DOPED CUALS2
    AKSENOV, I
    SATO, K
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (09) : 1063 - 1065
  • [2] REFLECTION MEASUREMENTS WITH POLARIZATION MODULATION - METHOD TO INVESTIGATE BANDGAPS IN BIREFRINGENT MATERIALS LIKE I-III-VI2 CHALCOPYRITE COMPOUNDS
    BETTINI, M
    [J]. SOLID STATE COMMUNICATIONS, 1973, 13 (05) : 599 - 602
  • [3] ELECTRICAL AND OPTICAL-PROPERTIES OF CUALSE2 GROWN BY IODINE CHEMICAL VAPOR TRANSPORT
    CHICHIBU, S
    SHISHIKURA, M
    INO, J
    MATSUMOTO, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) : 1648 - 1655
  • [4] LP-MOCVD GROWTH OF CUALSE2 EPITAXIAL LAYERS
    CHICHIBU, S
    IWAI, A
    MATSUMOTO, S
    HIGUCHI, H
    [J]. JOURNAL OF CRYSTAL GROWTH, 1993, 126 (04) : 635 - 642
  • [5] 2.51 EV PHOTOLUMINESCENCE FROM ZN-DOPED CUALSE2 EPILAYERS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    CHICHIBU, S
    MATSUMOTO, S
    SHIRAKATA, S
    ISOMURA, S
    HIGUCHI, H
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (25) : 3306 - 3308
  • [6] HIGH-CONCENTRATION ZN DOPING IN INP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
    CHICHIBU, S
    KUSHIBE, M
    EGUCHI, K
    FUNEMIZU, M
    OHBA, Y
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (02) : 859 - 861
  • [7] CUALSE2 CHALCOPYRITE EPITAXIAL LAYERS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    CHICHIBU, S
    SHIRAKATA, S
    IWAI, A
    MATSUMOTO, S
    HIGUCHI, H
    ISOMURA, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 1993, 131 (3-4) : 551 - 559
  • [8] CHICHIBU S, 1993, IN PRESS J APPL 1115
  • [9] PREPARATION AND PROPERTIES OF SINGLE-CRYSTAL CUALSE2 FILM
    MORITA, Y
    NARUSAWA, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (7B): : L1238 - L1240
  • [10] ROLE OF ZN IMPURITIES IN CUGAS2 AT RELATIVELY LOW CONCENTRATIONS REVEALED BY PHOTOLUMINESCENCE MEASUREMENTS
    OOE, A
    IIDA, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (08): : 1484 - 1489
12