NORMAL-STATE RESISTIVITY AND HALL-EFFECT IN BA1-XKXBIO3 EPITAXIAL-FILMS

被引：54
作者：
HELLMAN, ES
HARTFORD, EH
机构：
[1] AT and T Bell Laboratories, Murray Hill
来源：
PHYSICAL REVIEW B | 1993年 / 47卷 / 17期
关键词：
D O I：
10.1103/PhysRevB.47.11346
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Measurements of the normal-state resistivity and Hall effect on a variety of epitaxial Ba1-xKxBiO3 films show two different contributions to the electronic transport, a semiconducting part and a metallic part. The metallic component of the conductivity has a temperature dependence consistent with strong scattering of electrons by low-energy (< 24 meV) phonons. The semiconducting component is well described by a Fermi factor with activation energy 46 meV. The relative mixture of the two components varies with doping. We discuss the relevance of the transport measurements to superconductivity in Ba1-xKxBiO3.
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页码：11346 / 11353
页数：8
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