ROLE OF GROWTH TEMPERATURE IN GSMBE GROWTH OF STRAINED-LAYER INGAAS/GAAS QUANTUM-WELL LASERS

被引：7

作者：

ZHANG, G

OVTCHINNIKOV, A

PESSA, M

机构：

[1] Department of Physics, Tampere University of Technology, SF-33101 Tampere

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

基金：

芬兰科学院;

关键词：

D O I：

10.1016/0022-0248(93)90606-W

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Strained-layer InGaAs/GaAs single quantum well lasers were grown by gas-source molecular-beam epitaxy at growth temperatures in a range of 430 to 610-degrees-C. The optimum growth temperature for the quantum well of the lasers was found to be about 520-degrees-C. If the growth temperature is lower than this value, the threshold current density dramatically increases due to the presence of a high density of non-radiative carrier recombination centers in the quantum well, which give rise to alloy disordering and lattice mismatch defects in the quantum well. If the growth temperature is higher than 520-degrees-C, indium evaporation and segregation become severe during the growth of the quantum well. Thus, the InGaAs/GaAs interfaces become Tough and the threshold current density degrades. In addition, room-temperature photoluminescence was investigated for the samples in detail to clarify the quality of the quantum well.

引用

页码：209 / 212

页数：4

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[38] COMPARISON OF THE THEORETICAL AND EXPERIMENTAL DIFFERENTIAL GAIN IN STRAINED LAYER INGAAS/GAAS QUANTUM-WELL LASERS [J].

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