LINEWIDTH OF SPONTANEOUS EMISSION IN LASER-DIODES

被引：3

作者：

VANCONG, H ^{[1
]}

机构：

[1] HO CHI MINH UNIV,FAC SCI,DEPT ELECTR,SAIGON,VIETNAM

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 38卷 / 01期

关键词：

D O I：

10.1002/pssa.2210380164

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K69 / K72

页数：4

共 4 条

[1] SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS
LASHER, G
STERN, F
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A): : A553 - &
[2] FERMI ENERGY AND BAND-TAIL PARAMETERS IN HEAVILY DOPED SEMICONDUCTORS
VANCONG, H
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (11) : 1237 - 1240
[3] OPTICAL MAGNETOABSORPTION IN HEAVILY DOPED SEMICONDUCTORS
VANCONG, H
[J]. PHILOSOPHICAL MAGAZINE, 1973, 28 (05): : 983 - 991
[4] VANCONG H, 1972, CR ACAD SCI B PHYS, V275, P5