TEMPERATURE-RAMP RESISTANCE ANALYSIS TO CHARACTERIZE ELECTROMIGRATION

被引：31

作者：

PASCO, RW ^{[1
]}

SCHWARZ, JA ^{[1
]}

机构：

[1] SYRACUSE UNIV,DEPT CHEM ENGN & MAT SCI,SYRACUSE,NY 13210

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 05期

关键词：

D O I：

10.1016/0038-1101(83)90101-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：445 / 452

页数：8

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