MECHANISM OF RADIATIVE RECOMBINATION IN STRONGLY DOPED P-GAAS

被引：0

作者：

ZVEREV, LP ^{[1
]}

KRUZHAEV, VV ^{[1
]}

NEGASHEV, SA ^{[1
]}

机构：

[1] URAL STATE UNIV,SVERDLOVSK,USSR

来源：

JETP LETTERS | 1974年 / 20卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：22 / 24

页数：3

共 11 条

[1]

BONCHBRUEVICH VL, 1965, FIZIKA TVERDOGO TELA

[2]

CUSANO DA, 1964, SOL ST COMM, V2, P253

[3]

Nasledov D. N., 1969, Fizika i Tekhnika Poluprovodnikov, V3, P1207

[4]

NASLEDOV DN, 1970, SOV PHYS SEMICOND+, V3, P1012

[5] ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF GAAS AT 77 DEGREES K [J].

NATHAN, MI ;

BLUM, SE ;

BURNS, G ;

MARINACE, JC .

PHYSICAL REVIEW, 1963, 132 (04) :1482-&

[6]

PANKOVE JI, 1966, J PHYS SOC JPN, VS 21, P298

[7] THEORY OF OPTICAL MAGNETO-ABSORPTION EFFECTS IN SEMICONDUCTORS [J].

ROTH, LM ;

LAX, B ;

ZWERDLING, S .

PHYSICAL REVIEW, 1959, 114 (01) :90-103

[8] INTERBAND MAGNETO-OPTICAL ABSORPTION IN GALLIUM ARSENIDE [J].

VREHEN, QHF .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (01) :129-&

[9]

Zverev L. P., 1974, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, Pis'ma v Redaktsiyu, V20, P52

[10]

ZVEREV LP, 1974, SOV PHYS SEMICOND+, V7, P1056

← 1 2 →