EXPERIMENTAL INVESTIGATION AND NUMERICAL-SIMULATION OF LOW-FREQUENCY NOISE IN THIN-FILM SOI MOSFETS

被引：8
作者：
JOMAAH, J
BALESTRA, F
GHIBAUDO, G
机构：
[1] Laboratoire de Physique des Composants à Semiconducteurs, URA CNRS, ENSERG, INPG, Grenoble
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1994年 / 142卷 / 02期
关键词：
D O I：
10.1002/pssa.2211420229
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The low-frequency noise in N- and P-channel SOI MOSFETs is studied experimentally and by numerical simulations. The behavior of fully depleted devices with thin silicon film is investigated for various substrate biases and film dopings. The importance of volume inversion, which induces a decrease of the noise, is stressed.
引用
收藏
页码：533 / 537
页数：5
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