MODELING OF WRITE ERASE AND CHARGE RETENTION CHARACTERISTICS OF FLOATING GATE EEPROM DEVICES

[1] EUZENT B, 1981, IEEE P IRPS, P11

[2] ELECTRICAL-CONDUCTION AND BREAKDOWN IN OXIDES OF POLYCRYSTALLINE SILICON AND THEIR CORRELATION WITH INTERFACE TEXTURE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6240 - 6245

[3] JOHNSON WS, 1980, ELECTRONICS, P113

[4] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 278 - +

[5] Liang M., 1981, INT EL DEV M INT EL DEV M, P396

[6] Liang M. S., 1982, International Electron Devices Meeting. Technical Digest, P50

[7] Suciu P. I., 1982, International Electron Devices Meeting. Technical Digest, P737

[8] CHARGE RETENTION OF FLOATING-GATE TRANSISTORS UNDER APPLIED BIAS CONDITIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 297 - 299

[1] EUZENT B, 1981, IEEE P IRPS, P11

[2] ELECTRICAL-CONDUCTION AND BREAKDOWN IN OXIDES OF POLYCRYSTALLINE SILICON AND THEIR CORRELATION WITH INTERFACE TEXTURE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6240 - 6245

[3] JOHNSON WS, 1980, ELECTRONICS, P113

[4] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 278 - +

[5] Liang M., 1981, INT EL DEV M INT EL DEV M, P396

[6] Liang M. S., 1982, International Electron Devices Meeting. Technical Digest, P50

[7] Suciu P. I., 1982, International Electron Devices Meeting. Technical Digest, P737

[8] CHARGE RETENTION OF FLOATING-GATE TRANSISTORS UNDER APPLIED BIAS CONDITIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 297 - 299