SELECTIVE MOCVD GROWTH OF GAALAS ON PARTLY MASKED SUBSTRATES AND ITS APPLICATION TO OPTOELECTRONIC DEVICES

被引：41

作者：

TAKAHASHI, Y ^{[1
]}

SAKAI, S ^{[1
]}

UMENO, M ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 68卷 / 01期

关键词：

D O I：

10.1016/0022-0248(84)90418-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：206 / 213

页数：8

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