INTERFACE STATES IN HETEROJUNCTIONS BETWEEN NARROW-GAP SEMICONDUCTORS

被引：8

作者：

KANDILAROV, BD

DETCHEVA, V

机构：

[1] BULGARIAN ACAD SCI,INST NUCL RES,SOFIA 13,BULGARIA

[2] SOFIA UNIV,DEPT SOLID STATE PHYS,SOFIA 26,BULGARIA

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1977年 / 10卷 / 10期

关键词：

D O I：

10.1088/0022-3719/10/10/013

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1703 / 1716

页数：14

共 22 条

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[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (10): : 1789 - +
[10] THEORY OF ELECTRONIC SURFACE-STATES IN SEMICONDUCTORS
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