EFFECTS OF NITROGEN ON THE ELECTRICAL-PROPERTIES OF SPUTTERED SICX FILMS

被引：5

作者：

NAGAI, T

YAMAMOTO, K

KOBAYASHI, I

机构：

来源：

THIN SOLID FILMS | 1983年 / 106卷 / 04期

关键词：

D O I：

10.1016/0040-6090(83)90342-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：303 / 309

页数：7

共 11 条

[1]

ABOAF JA, 1968, J ELECTROCHEM SOC, V116, P1736

[2] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE [J].

ANDERSON, DA ;

SPEAR, WE .

PHILOSOPHICAL MAGAZINE, 1977, 35 (01) :1-16

[3] REACTIVE PLASMA DEPOSITED SIXCYHZ FILMS [J].

CATHERINE, Y ;

TURBAN, G .

THIN SOLID FILMS, 1979, 60 (02) :193-200

[4] STRUCTURE OF CHEMICAL VAPOR-DEPOSITED SILICON-CARBIDE [J].

CHIN, J ;

GANTZEL, PK ;

HUDSON, RG .

THIN SOLID FILMS, 1977, 40 (JAN) :57-72

[5] LOW-TEMPERATURE EPITAXY OF BETA-SIC BY REACTIVE DEPOSITION [J].

LEARN, AJ ;

HAQ, KE .

APPLIED PHYSICS LETTERS, 1970, 17 (01) :26-&

[6] STRUCTURES AND PHYSICAL-PROPERTIES OF SPUTTERED AMORPHOUS SIC FILMS [J].

MATSUNAMI, H ;

MASAHIRO, H ;

TANAKA, T .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) :249-260

[7] PREPARATION AND PROPERTIES OF NONCRYSTALLINE SILICON CARBIDE FILMS [J].

MOGAB, CJ ;

KINGERY, WD .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) :3640-&

[8] SIC THIN-FILM THERMISTOR [J].

NAGAI, T ;

YAMAMOTO, K ;

KOBAYASHI, I .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1982, 15 (05) :520-524

[9] ELECTRICAL-PROPERTIES AND HOPPING TRANSPORT IN AMORPHOUS SILICON-CARBIDE FILMS [J].

NAIR, K ;

MITRA, SS .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1977, 24 (01) :1-17

[10] EFFECTS OF TARGET MATERIALS ON THE STRUCTURAL-PROPERTIES OF SPUTTERED SIC FILMS [J].

TOHDA, T ;

WASA, K ;

HAYAKAWA, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :44-47

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