ULTRAVIOLET ELECTROLUMINESCENCE IN AIN

被引：46

作者：

RUTZ, RF ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 07期

关键词：

D O I：

10.1063/1.88788

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：379 / 381

页数：3

共 10 条

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[7]

RUTZ RF, 1974, SILICON CARBIDE 1973, P72

[8] SOME PROPERTIES OF ALUMINUM NITRIDE [J].

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LENIE, C .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (04) :308-314

[9] ELECTROLUMINESCENCE OF A1N [J].

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[10] EPITAXIALLY GROWN AIN AND ITS OPTICAL BAND GAP [J].

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GILBERT, SL .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :292-296

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