INFLUENCE OF IRRADIATION INTENSITY ON RADIATION-DAMAGE OF SILICON

被引:0
作者
ZOLOTUKHIN, AA [1 ]
KOVALENKO, AK [1 ]
MESHCHERYAKOVA, TM [1 ]
MILEVSKII, LS [1 ]
PAGAVA, TA [1 ]
机构
[1] AA BAIKOV MET INST,MOSCOW,USSR
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 9卷 / 06期
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D O I
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中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:800 / 800
页数:1
相关论文
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HILL, DE .
PHYSICAL REVIEW, 1959, 114 (06) :1414-1420
[2]   EFFECTS OF DOSAGE + IMPURITIES ON RADIATION DAMAGE OF CARRIER LIFE TIME IN SI [J].
NAKANO, T ;
INUISHI, Y .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (06) :851-&
[3]  
PANOV VI, 1971, SOV PHYS SEMICOND+, V5, P300