A LOW-VOLTAGE ALTERABLE EEPROM WITH METAL-OXIDE NITRIDE OXIDE SEMICONDUCTOR (MONOS) STRUCTURES

被引：79
作者：
SUZUKI, E
HIRAISHI, H
ISHII, K
HAYASHI, Y
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 02期
关键词：
D O I：
10.1109/T-ED.1983.21085
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：122 / 128
页数：7
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