NON-QUASI-STATIC CAPACITANCE OF P/N JUNCTION SPACE-CHARGE REGIONS

被引:8
作者
LIOU, JJ
机构
[1] Univ of Central Florida, Orlando,, FL, USA, Univ of Central Florida, Orlando, FL, USA
关键词
ELECTRIC MEASUREMENTS - Capacitance;
D O I
10.1016/0038-1101(88)90088-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effect of the free-carrier delay time on the space-charge-region capacitance is investigated and a method of finding such capacitance is developed. The method, which is based on a comprehensive quasi-static space-charge-region capacitance model and on the concept of the delay time in the region, describes the non-quasi-static capacitance for all voltages, all frequencies, and for both step and linear-graded junction profiles. The method requires a simple numerical iterative procedure. The results from the present method show good agreement when compared with a numerical method based on Sah's transmission-line equivalent circuit model and with measured dependencies. The method provides a tool for more accurate semiconductor device modeling and for integrated circuit simulations.
引用
收藏
页码:81 / 86
页数:6
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