DYNAMIC EFFECTS IN RHEED FROM MBE GROWN GAAS(001) SURFACES

被引：79
作者：
LARSEN, PK
DOBSON, PJ
NEAVE, JH
JOYCE, BA
BOLGER, B
ZHANG, J
机构：
[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
[2] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,LONDON SW7 2AZ,ENGLAND
来源：
SURFACE SCIENCE | 1986年 / 169卷 / 01期
关键词：
D O I：
10.1016/0039-6028(86)90745-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：176 / 196
页数：21
相关论文
共 27 条
[21]  
Miyake S., 1970, Acta Crystallographica, Section A (Crystal Physics, Diffraction, Theoretical and General Crystallography), Va26, P60, DOI 10.1107/S0567739470000074
[22]   DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS [J].
NEAVE, JH ;
JOYCE, BA ;
DOBSON, PJ ;
NORTON, N .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01) :1-8
[23]   SOME OBSERVATIONS ON GE-GAAS(001) AND GAAS-GE(001) INTERFACES AND FILMS [J].
NEAVE, JH ;
LARSEN, PK ;
JOYCE, BA ;
GOWERS, JP ;
VANDERVEEN, JF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :668-674
[24]   STRUCTURE AND STOICHIOMETRY OF (100)-GAAS SURFACES DURING MOLECULAR-BEAM EPITAXY [J].
NEAVE, JH ;
JOYCE, BA .
JOURNAL OF CRYSTAL GROWTH, 1978, 44 (04) :387-397
[25]   THE GAAS(001)-C(4X4) AND (2X4) RECONSTRUCTIONS - A COMPARATIVE PHOTOEMISSION-STUDY [J].
VANDERVEEN, JF ;
LARSEN, PK ;
NEAVE, JH ;
JOYCE, BA .
SOLID STATE COMMUNICATIONS, 1984, 49 (07) :659-662
[26]   DAMPED OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAAS MBE [J].
VANHOVE, JM ;
LENT, CS ;
PUKITE, PR ;
COHEN, PI .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :741-746
[27]  
[No title captured]
123