DYNAMIC EFFECTS IN RHEED FROM MBE GROWN GAAS(001) SURFACES

被引：79
作者：
LARSEN, PK
DOBSON, PJ
NEAVE, JH
JOYCE, BA
BOLGER, B
ZHANG, J
机构：
[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
[2] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,LONDON SW7 2AZ,ENGLAND
来源：
SURFACE SCIENCE | 1986年 / 169卷 / 01期
关键词：
D O I：
10.1016/0039-6028(86)90745-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：176 / 196
页数：21
相关论文
共 27 条
[1]  
BOLGER B, UNPUB
[2]   ANGLE-RESOLVED PHOTOEMISSION, VALENCE-BAND DISPERSIONS E(K-]), AND ELECTRON AND HOLE LIFETIMES FOR GAAS [J].
CHIANG, TC ;
KNAPP, JA ;
AONO, M ;
EASTMAN, DE .
PHYSICAL REVIEW B, 1980, 21 (08) :3513-3522
[3]   BONDING DIRECTION AND SURFACE-STRUCTURE ORIENTATION ON GAAS (001) [J].
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :2841-2843
[4]   GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES [J].
CHO, AY .
THIN SOLID FILMS, 1983, 100 (04) :291-317
[5]  
CHO AY, 1971, J VAC SCI TECHNOL, V8, P531
[6]  
Foxon C. T., 1981, CURRENT TOPICS MAT S, V7, P1
[7]   MONTE-CARLO SIMULATIONS OF MBE GROWTH OF III-V SEMICONDUCTORS - THE GROWTH-KINETICS, MECHANISM, AND CONSEQUENCES FOR THE DYNAMICS OF RHEED INTENSITY [J].
GHAISAS, SV ;
MADHUKAR, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :540-546
[8]   ELEKTRONENINTERFEROMETRISCHE BESTIMMUNG DER MITTLEREN INNEREN POTENTIALE VON A1 CU UND GE UNTER VERWENDUNG EINES NEUEN PRAPARATIONSVERFAHRENS [J].
HOFFMANN, H ;
JONSSON, C .
ZEITSCHRIFT FUR PHYSIK, 1965, 182 (04) :360-&
[9]   OBSERVATION OF THE SURFACE-STATE RESONANCE EFFECT BY THE CONVERGENT BEAM RHEED TECHNIQUE [J].
ICHIMIYA, A ;
KAMBE, K ;
LEHMPFUHL, G .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1980, 49 (02) :684-688
[10]   RHEED STUDIES OF HETEROJUNCTION AND QUANTUM-WELL FORMATION DURING MBE GROWTH - FROM MULTIPLE-SCATTERING TO BAND OFFSETS [J].
JOYCE, BA ;
DOBSON, PJ ;
NEAVE, JH ;
WOODBRIDGE, K ;
ZHANG, J ;
LARSEN, PK ;
BOLGER, B .
SURFACE SCIENCE, 1986, 168 (1-3) :423-438
123