GAAS AND GAALAS EQUI-RATE ETCHING USING A NEW REACTIVE ION-BEAM ETCHING SYSTEM

被引：48
作者：
ASAKAWA, K
SUGATA, S
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 10期
关键词：
D O I：
10.1143/JJAP.22.L653
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：L653 / L655
页数：3
相关论文
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