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- [8] Characterization of InTiSb/InSb grown by low-pressure metal-organic chemical vapor deposition on a GaAs substrateJournal of Applied Physics, 1994, 75 (06):Choi, Y.H.Staveteig, P.T.Bigan, E.Razeghi, M.
- [9] INVESTIGATION OF THE CATIONIC ORDERING IN INGAP/GAAS EPILAYERS GROWN BY LOW-PRESSURE, METAL-ORGANIC VAPOR-PHASE EPITAXYMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3): : 219 - 223FRANCESIO, LFRANZOSI, PCALDIRONI, MVITALI, LDELLAGIOVANNA, MDIPAOLA, AVIDIMARI, EPELLEGRINO, S
- [10] INVESTIGATION OF ZINC INCORPORATION IN GAAS EPILAYERS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR DEPOSITIONJOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1860 - 1863CHANG, CYCHEN, LPWU, CH