LOW-DISLOCATION-DENSITY GAAS EPILAYERS GROWN ON GE-COATED SI SUBSTRATES BY MEANS OF LATERAL EPITAXIAL OVERGROWTH

被引：58
作者：
TSAUR, BY
MCCLELLAND, RW
FAN, JCC
GALE, RP
SALERNO, JP
VOJAK, BA
BOZLER, CO
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 04期
关键词：
D O I：
10.1063/1.93508
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：347 / 349
页数：3
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