LOW-DISLOCATION-DENSITY GAAS EPILAYERS GROWN ON GE-COATED SI SUBSTRATES BY MEANS OF LATERAL EPITAXIAL OVERGROWTH

被引：58
|
作者：
TSAUR, BY
MCCLELLAND, RW
FAN, JCC
GALE, RP
SALERNO, JP
VOJAK, BA
BOZLER, CO
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 04期
关键词：
D O I：
10.1063/1.93508
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：347 / 349
页数：3
相关论文
共 50 条
  • [1] Low-dislocation-density, nonplanar GaN templates for buried heterostructure lasers grown by lateral epitaxial overgrowth
    Ren, DW
    Zhou, W
    Dapkus, PD
    APPLIED PHYSICS LETTERS, 2005, 86 (11) : 1 - 3
  • [2] GAAS EPITAXIAL-GROWTH ON GE-COATED SILICON SUBSTRATES
    FREUNDLICH, A
    LEYCURAS, A
    VERIE, C
    ANNALES DE CHIMIE-SCIENCE DES MATERIAUX, 1986, 11 (08): : 625 - 632
  • [3] Epitaxial lateral overgrowth of wide dislocation-free GaAs on Si substrates
    Chang, YS
    Naritsuka, S
    Nishinaga, T
    PROCEEDINGS OF THE TWENTY-SEVENTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXVII), 1997, 97 (21): : 196 - 200
  • [4] Thermal strain in GaAs layers grown by epitaxial lateral overgrowth on Si substrates
    Zytkiewicz, ZR
    Domagala, J
    APPLIED PHYSICS LETTERS, 1999, 75 (18) : 2749 - 2751
  • [5] Low dislocation density AlGaN epilayers by epitaxial overgrowth of patterned templates
    Allerman, A. A.
    Crawford, M. H.
    Lee, S. R.
    Clark, B. G.
    JOURNAL OF CRYSTAL GROWTH, 2014, 388 : 76 - 82
  • [6] GAAS LIGHT-EMITTING-DIODES FABRICATED ON GE-COATED SI SUBSTRATES
    FLETCHER, RM
    WAGNER, DK
    BALLANTYNE, JM
    APPLIED PHYSICS LETTERS, 1984, 44 (10) : 967 - 969
  • [7] GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES
    GALE, RP
    FAN, JCC
    TSAUR, BY
    TURNER, GW
    DAVIS, FM
    ELECTRON DEVICE LETTERS, 1981, 2 (07): : 169 - 171
  • [8] EFFECT OF SI DOPING ON EPITAXIAL LATERAL OVERGROWTH OF GAAS ON GAAS-COATED SI SUBSTRATE
    SAKAWA, S
    NISHINAGA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (3B): : L359 - L361
  • [9] Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth
    Zang, K. Y.
    Chua, S. J.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 1585 - 1588
  • [10] Dielectric response of thick low dislocation-density Ge epilayers grown on (001) Si
    Junge, KE
    Lange, R
    Dolan, JM
    Zollner, S
    Dashiell, M
    Orner, BA
    Kolodzey, J
    APPLIED PHYSICS LETTERS, 1996, 69 (26) : 4084 - 4086
12345