ORIGIN OF N-TYPE CONDUCTIVITY OF LOW-TEMPERATURE-GROWN INP

被引：34

作者：

CHEN, WM

DRESZER, P

PRASAD, A

KURPIEWSKI, A

WALUKIEWICZ, W

WEBER, ER

SORMAN, E

MONEMAR, B

LIANG, BW

TU, CW

机构：

[1] LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720

[2] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN

[3] UNIV CALIF SAN DIEGO,DEPT ELECT ENGN,LA JOLLA,CA 92093

[4] UNIV WARSAW,DEPT EXPTL PHYS,PL-00681 WARSAW,POLAND

[5] POLISH ACAD SCI,HIGH PRESSURE RES CTR UMPRESS,PL-01142 WARSAW,POLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.357052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown with correlated magnetic resonance and electrical measurements that the P(In) antisite is the prevailing defect in InP grown by molecular-beam epitaxy at low temperature. The first ionization level of the P(In) antisite is resonant with the conduction band, which makes the material n-type conducting due to autoionization of the P(In) antisite.

引用

页码：600 / 602

页数：3

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