2-PHOTON ABSORPTION IN PARALLEL ELECTRIC AND MAGNETIC-FIELDS

被引：0

作者：

MOUSSA, AR

机构：

[1] Dept. of Phys., Ain Shams Univ., Cairo

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1991年 / 3卷 / 32期

关键词：

D O I：

10.1088/0953-8984/3/32/016

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The coefficient of two-photon absorption in the presence of a static external electric field E and a static external magnetic field H when applied parallel to each other is theoretically investigated. It is shown that in the case of direct-gap semiconductors the two-photon electroabsorption exhibits an oscillatory behaviour around the van Hove singularity M0. This is due to discrete Stark levels at high electric fields (E greater-than-or-equal-to 1000 V cm-1) and low magnetic fields (H less-than-or-equal-to 100 kG).

引用

页码：6113 / 6119

页数：7

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