INTERFACE ENHANCED RAMAN-SCATTERING OF THIN SIC LAYERS AT THE GRAPHITE SILICON BOUNDARY

被引：3
作者：
WATANABE, M
MINAGAWA, H
MIYAZAKI, T
YAMASHINA, T
机构：
[1] HOKKAIDO UNIV,CATALYSIS RES INST,SAPPORO,HOKKAIDO 060,JAPAN
[2] HOKKAIDO UNIV,DEPT NUCL ENGN,SAPPORO,HOKKAIDO 060,JAPAN
来源：
SURFACE SCIENCE | 1989年 / 208卷 / 1-2期
关键词：
D O I：
10.1016/0039-6028(89)90042-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：164 / 176
页数：13
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