CARRIER DENSITY DISTRIBUTION IN MODULATION DOPED GAAS-ALXGA1-XAS QUANTUM WELL HETEROSTRUCTURES

被引：9
作者：
HSIEH, TC
HESS, K
COLEMAN, JJ
DAPKUS, PD
机构：
[1] UNIV ILLINOIS,MAT LAB,URBANA,IL 61801
[2] UNIV SO CALIF,DEPT ELECT ENGN,LOS ANGELES,CA 90069
来源：
SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 12期
关键词：
D O I：
10.1016/0038-1101(83)90145-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1173 / 1176
页数：4
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