2ND-ORDER OPTICAL SUSCEPTIBILITY OF STRAINED GESI/SI SUPERLATTICES

被引：13

作者：

FRIEDMAN, L ^{[1
]}

SOREF, RA ^{[1
]}

机构：

[1] USAF,ROME AIR DEV CTR,SOLID STATE SCI DIRECTORATE,BEDFORD,MA 01731

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 06期

关键词：

D O I：

10.1063/1.337947

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2342 / 2346

页数：5

共 11 条

[1] SECOND ORDER OPTICAL SUSCEPTIBILITY OF 3-5 COMPOUNDS [J].

FLYTZANIS, C ;

DUCUING, J .

PHYSICS LETTERS A, 1968, A 26 (07) :315-+

[2]

FLYTZANIS C, 1968, PHYS REV, V178, P1218

[3] LINEAR ELECTROOPTIC EFFECT IN GEXSI1-X SI STRAINED-LAYER SUPERLATTICES [J].

FRIEDMAN, L ;

SOREF, RA .

ELECTRONICS LETTERS, 1986, 22 (15) :819-821

[4] NONLINEAR OPTICAL SUSCEPTIBILITIES IN GROUP-4 AND 3-5 SEMICONDUCTORS [J].

JHA, SS ;

BLOEMBERGEN, N .

PHYSICAL REVIEW, 1968, 171 (03) :891-+

[5] OBSERVATION OF ORDER-DISORDER TRANSITIONS IN STRAINED-SEMICONDUCTOR SYSTEMS [J].

OURMAZD, A ;

BEAN, JC .

PHYSICAL REVIEW LETTERS, 1985, 55 (07) :765-768

[6]

OURMAZD A, COMMUNICATION

[7]

OURMAZD A, 1985, MATERIALS RES SOC S, V56

[8]

PAULING L, 1935, INTRO QUANTUM MECHAN

[9] BAND ALIGNMENTS OF COHERENTLY STRAINED GEXSI1-X/SI HETEROSTRUCTURES ON LESS-THAN-001-GREATER-THAN GEYSI1-Y SUBSTRATES [J].

PEOPLE, R ;

BEAN, JC .

APPLIED PHYSICS LETTERS, 1986, 48 (08) :538-540

[10] Single-crystal silicon: a new material for 1.3 and 1.6 μm integrated-optical components [J].

Soref, R. A. ;

Lorenzo, J. P. .

ELECTRONICS LETTERS, 2009, :26-27

← 1 2 →