EFFECT OF LIGHT IRRADIATION ON ELECTRIC-FIELD-INDUCED RESISTANCE SWITCHING PHENOMENON IN PLANAR VO2/c-Al2O3 STRUCTURE

被引：3
作者：
Mohamad, Nurul Ezreena [1 ]
Okimura, Kunio [2 ]
Sakai, Joe [3 ]
机构：
[1] Tokai Univ, Grad Sch Engn, Elect & Elect Syst Engn Course, 1117 Hiratsuka, Kitakaname, Kanagawa 2591292, Japan
[2] Tokai Univ, Dept Informat Telecommun & Elect, 1117 Kitakaname, Hiratsuka, Kanagawa 2591292, Japan
[3] Univ Tours, LEMA, CNRS, UMR 6157,CEA, F-37200 Tours, France
来源：
INTERNATIONAL JOURNAL OF NANOSCIENCE | 2009年 / 8卷 / 1-2期
基金：
日本学术振兴会;
关键词：
Vanadium dioxide; metal-insulator transition; resistance switching; light irradiation;
D O I：
10.1142/S0219581X09005773
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A simple device of VO2 film with two terminal electrodes revealed current jump phenomena at certain applied voltage. In this study, we investigated the effect of light irradiation on the electric field-induced resistance switching phenomenon. Based on changes of current-voltage characteristics under light irradiation, we discussed the effect of light irradiation on this device.
引用
收藏
页码：147 / 150
页数：4
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