ELECTRONIC TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON

被引：102

作者：

OVERHOF, H ^{[1
]}

BEYER, W ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH, INST GRENZFLACHENFORSCH & VAKUUMPHYS, D-5170 JULICH 1, FED REP GER

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1983年 / 47卷 / 04期

关键词：

D O I：

10.1080/13642812.1983.10590676

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：377 / 392

页数：16

共 40 条

[1]

ALLEN PB, 1981, PHYS REV B, V24, P7479, DOI 10.1103/PhysRevB.24.7479

[2] THEORY OF THE TEMPERATURE-DEPENDENCE OF THE DIRECT GAP OF GERMANIUM [J].

ALLEN, PB ;

CARDONA, M .

PHYSICAL REVIEW B, 1981, 23 (04) :1495-1505

[3] TRANSPORT-PROPERTIES OF A-SI - H ALLOYS PREPARED BY RF SPUTTERING-I [J].

ANDERSON, DA ;

PAUL, W .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 44 (02) :187-213

[4]

ANDERSON DA, 1982, PHILOS MAG B, V45, P1, DOI 10.1080/01418618208243899

[5] THICKNESS AND TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J].

AST, DG ;

BRODSKY, MH .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (03) :273-285

[6] TRANSPORT PROPERTIES OF DOPED AMORPHOUS SILICON [J].

BEYER, W ;

OVERHOF, H .

SOLID STATE COMMUNICATIONS, 1979, 31 (01) :1-4

[7]

BEYER W, 1977, COMMUN PHYS, V2, P121

[8]

BEYER W, 1977, 7TH P INT C AM LIQ S, P328

[9]

BUTCHER P, 1977, J PHYS C SOLID STATE, V42, P3803

[10]

Carlson D. E., 1979, Amorphous semiconductors, P287

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