A MODEL OF THE CHEMICAL PROCESSES OCCURRING IN CF-4/O2 DISCHARGES USED IN PLASMA-ETCHING

被引：280
作者：
PLUMB, IC
RYAN, KR
机构：
来源：
PLASMA CHEMISTRY AND PLASMA PROCESSING | 1986年 / 6卷 / 03期
关键词：
D O I：
10.1007/BF00575129
中图分类号：
TQ [化学工业];
学科分类号：
0817 ;
摘要：
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页码：205 / 230
页数：26
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