TRANSITION PROBABILITY OF IMPACT IONIZATION IN SILICON

被引：9
作者：
AHMAD, S
KHOKLEY, WS
机构：
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1967年 / 28卷 / 12期
关键词：
D O I：
10.1016/0022-3697(67)90037-6
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
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页码：2499 / &
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