THE EFFECT OF STRAIN ON THE BASE RESISTANCE AND TRANSIT-TIME OF UNGRADED AND COMPOSITIONAL-GRADED SIGE HBTS

被引：15

作者：

ROSENFELD, D ^{[1
]}

ALTEROVITZ, SA ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,FAC ELECT ENGN,IL-32000 HAIFA,ISRAEL

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 01期

关键词：

D O I：

10.1016/0038-1101(94)90115-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A theoretical study of the effects of the strain on the base properties of ungraded and compositional-graded n-p-n SiGe Heterojunction Bipolar Transistors is presented. The dependencies of the transverse hole mobility and longitudinal electron mobility upon strain, composition and doping, are formulated using published Monte-Carlo data and, consequently, the base resistance and transit time are modeled and calculated. The results are compared to results obtained using common formulas that ignore these dependencies. The differences between the two sets of results are shown. The paper's conclusion is that for the design, analysis and optimization of high frequency SiGe HBTs the strain effects on the base properties cannot be ignored.

引用

页码：119 / 126

页数：8

共 25 条

[1]

ARORA ND, 1982, IEEE T ELECTRON DEV, V29, P284

[2] SILICON-BASED SEMICONDUCTOR HETEROSTRUCTURES - COLUMN-IV BANDGAP ENGINEERING [J].

BEAN, JC .

PROCEEDINGS OF THE IEEE, 1992, 80 (04) :571-587

[3]

BROUNSTEIN R, 1958, PHYS REV, V109, P695

[4] COMPARATIVE-ANALYSIS OF THE HIGH-FREQUENCY PERFORMANCE OF SI/SI1-XGEX HETEROJUNCTION BIPOLAR AND SI BIPOLAR-TRANSISTORS [J].

CHEN, J ;

GAO, GB ;

MORKOC, H .

SOLID-STATE ELECTRONICS, 1992, 35 (08) :1037-1044

[5] EFFECTIVE MASS AND MOBILITY OF HOLES IN STRAINED SI1-XGEX LAYERS ON (001) SI1-YGEY SUBSTRATE [J].

CHUN, SK ;

WANG, KL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (09) :2153-2164

[6]

Comfort J. H., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P857, DOI 10.1109/IEDM.1991.235290

[7]

GRUHLE A, 1991, 1992 AVS C CHIC

[8] CHARGED CARRIER TRANSPORT IN SI1-XGEX PSEUDOMORPHIC ALLOYS MATCHED TO SI STRAIN-RELATED TRANSPORT IMPROVEMENTS [J].

HINCKLEY, JM ;

SANKARAN, V ;

SINGH, J .

APPLIED PHYSICS LETTERS, 1989, 55 (19) :2008-2010

[9] SMALL-GEOMETRY, HIGH-PERFORMANCE, SI-SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

KAMINS, TI ;

NAUKA, K ;

KRUGER, JB ;

HOYT, JL ;

KING, CA ;

NOBLE, DB ;

GRONET, CM ;

GIBBONS, JF .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (11) :503-505

[10]

KARLSTEEN M, 1990, SOLID ST ELECTRON, V33, P299

← 1 2 3 →